Press-Pack and Soldered Packaging IGBT Modules for Pulsed Power Applications

Abstract

Aiming at researching into the low-inductance and good heat dissipation capability of rigid Press-Pack IGBT (PPI), the commercial soldered IGBT module is compared with it in terms of the di/dt and T j in pulse power applications in this paper. The results of the extracted parasitic inductance by the FEM tool show that the parasitic inductance of the Press-Pack IGBT is only 7% of the soldered IGBT module with the same voltage and current rate. The simulated and experimental results show that the discharge current of Press-Pack IGBT module has greater di/dt and a narrower pulse width than the soldered one. The thermoelectric coupling simulations of Press-Pack and soldered IGBT modules show that at repetitive frequency mode, the junction temperature rise of the Press-Pack IGBT is about 50% lower than that of the soldered IGBT. In the thermal steady state experiment, the steady-state junction temperature of the Press-Pack IGBT, even with a higher power, is lower than that of the soldered IGBT module. Therefore, the Press-Pack IGBT module shows better heat dissipation capability and is more suitable for repetitive pulsed power applications.