Abstract
The polytypic structure of implanted layers in (1 1 0 0)-oriented 4H-SiC has been investigated using Rutherford backscattering spectrometry (RBS) combined with channeling technique and cross-sectional transmission electron microsopy (XTEM). Samples have been implanted with 400 keV Ga to a dose of 5 ×10 15/cm 2 through a 200 nm-thick SiO 2 layer at room temperature. The implantation damage is completely removed by annealing at 1700 °C for 30 min. The recrystallization process of the implanted layer in (1 1 0 0)-oriented 4H-SiC is different from that for (0 0 0 1)-oriented SiC, in which the implanted layer is highly defective and contains various polytype crystals such as 3C. The XTEM investigation reveals that the implanted layer in SiC (1 1 0 0) is regrown with the original polytype of 4H.
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