Abstract
In order to improve the gas sensing performance of traditional SnO2 semiconductor nanomaterials, Bi-doped SnO2 hierarchical flower-shaped nanostructures had been synthesized by a one-step hydrothermal route. Diverse techniques characterization results collectively revealed that Bi ions have been successfully doped into SnO2 lattice and samples present numerous uniform flower-shaped nanostructures composed of many layered petal-like thin nanosheets. Benefiting from such unique 3D hierarchical flower-shaped nanostructures and Bi doping, the sensors based on Bi-doped SnO2 exhibited superior gas sensing performance concluding higher response value, faster response/recovery time, good stability and excellent selectivity to HCHO at the optimum operating temperature of 170 °C. Therefore, Bi-doped SnO2 hierarchical flower-shaped nanostructures could be used as a candidate semiconductor gas sensing materials for manufacturing highly sensitive HCHO gas sensors in the future.
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