Abstract
Abstract Hydrogenated and fluorinated amorphous silicon-sulfur alloy thin films were grown by capacitively coupled radio frequency glow discharge decomposition of SiH4, SiF4 and H2S gas mixtures. Infrared spectroscopy was used to probe the bonding structure of the material. The infrared spectra contains three sets of vibrational modes normally observed in a-Si:H, a-Si:F, H and a-Si,S:H. Analysis of the spectra reveals the presence of a strong induction effect arising from the high electronegativity of sulfur and fluorine atoms. The optical Tauc gap was determined from the optical transmission spectra and found to increase from 1.92 eV in a-Si:F, H to 2.12 eV in sulfur rich alloys. The gas evolution spectra reveals that hydrogen, fluorine and sulfur based species evolve at temperatures which are in direct proportion to their binding energy with the silicon matrix.
Published Version
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