Abstract
Zn1-xCrxO resistive switching film with different Cr content was prepared on SS304 substrate by sol–gel method combined with spin plating and heat treatment. The surface morphology, composition, structure, semiconductor type and oxygen vacancy concentration of Zn1-xCrxO films were observed and analyzed by scanning electron microscopy (SEM), X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), Mott-Schottky curves, X-ray photoelectron spectroscopy (XPS) electron paramagnetic resonance spectroscopy (ESR) and density functional theory (DFT) calculation. And the corrosion resistance of Zn1-xCrxO film were investigated by polarization curves and electrochemical impedance spectroscopy (EIS). The results show that the prepared Zn1-xCrxO films have a uniform dense surface which belongs to n-type semiconductor type, and the oxygen vacancy concentration in the films increases with the increase of Cr content. With the increasing of Cr content, the corrosion resistance of films is decreased. During the immersion process, the corrosion resistance of Zn1-xCrxO film is firstly increased and then decreased with increasing immersion time. By applying immersion and polarization treatment the corrosion resistance of Zn1-xCrxO film could be regulated between the high and low resistance states (HRS and LRS) due to the creation and disappearance of oxygen vacancies in the film.
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