Abstract
Homogeneous thin films of zinc titanate have been successfully prepared on Si(100) wafers by depositing a film of zinc and titanium oxides (ZnO‐TiO2) by low‐pressure metalorganic chemical vapor deposition (MOCVD), followed by an annealing treatment. The precursors used for the deposition were diethylzinc (DEZ), tetraisopropoxide titanium (TPT), and water. By performing the deposition at temperatures between 140 and 350C, the stoichiometry of the as‐deposited films could be effectively controlled over Zn/Ti ratios between 0.5 and 2.5, which cover the composition of various zinc titanate phases identified in the literature. The as‐deposited ZnO‐TiO2 films are amorphous, and possess a fairly smooth surface. XPS and SIMS analysis showed that the composition of these films is uniform over the wafer as well as through the films bulk. An annealing treatment of the as‐deposited films at high temperature
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