Abstract
Preparation of high quality c-axis oriented YBa2Cu3O7 thin films on sapphire substrate has been studies. CeO2 buffer layer and in-situ YBa2Cu3O7 thin films were grown by pulsed laser deposition. Superconducting properties, crystallinity, and surface morphologies were characterized by 4-probe method, XRD, and SEM, respectively. Surface morphologies and superconducting properties of YBa2Cu3O7 thin films exhibit strong dependence on the crystallinity of CeO2 buffer layer. The best a-axis oriented CeO2 buffer layers could be grown at 800 °C under 50 mTorr of oxygen pressure. The YBa2Cu3O7 thin films on the CeO2 layer have critical temperature (R=0) of >89.5 K, and critical current densities ≈1.5×106 A/cm2 at 77 K.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
