Abstract
We have studied the growth of Cl incorporated microcrystalline silicon [μc-Si(:Cl)]. The flow rates of H2 and SiH2Cl2 were varied to deposit wide band gap n+ μc-Si(:Cl) films by using SiH4/SiH2Cl2/H2/PH3 mixtures. The n+ μc-Si(:Cl) film deposited with SiH2Cl2/SiH4 = 1 exhibited a room temperature conductivity of 2 S/cm and an optical band gap of ∼2.0 eV that is at least 0.2 eV higher than that of conventional n+ μc-Si. The surface morphology of the μc-Si(:Cl) film is much rougher than that of conventional μc-Si prepared by using SiH4/H2 plasma.
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