Preparation of Ultralow Dielectric-Constant Porous Silica Films Using Tween 80 as a Template

Abstract

Porous silica films with ultralow-k (1.47-2.36) and low leakage current densities or lower in an electric field of 1 MV/cm) were prepared by a surfactant-templating process. The nonionic surfactant Tween 80 [also known as Polyoxyethylene(20) sorbitan monooleate] was used as a template in the spin-on film preparation process. The effects from the parameters for preparing coating solution were carefully investigated. Due to its simplicity, the reported process may be a promising one for the preparation of ultralow-k dielectrics in the future. © 2003 The Electrochemical Society. All rights reserved.