An Ultralow Dielectric Constant Porous Silica Film with Cu Directly Grown by a Displacement Process

Abstract

Smooth porous silica films can be prepared by using Tween 80 and Cu films can be fabricated by displacing the porous dielectric film with Cu in a chemical reaction process. The dielectric constant ( value) of the porous silica film was 1.44, and low leakage current densities ( or lower in an electric field of ) were prepared using a surfactant-templating process. The nonionic surfactant Tween 80 [also known as polyoxyethylene(20) sorbitan monooleate] was used as a template in the spin-on film preparation process.