Abstract
Tungsten carbide films were synthesized on Si wafer by pulsed vacuum arc deposition using a sintered tungsten carbide cathode. Arc discharge voltage, capacitance of capacitor, and cathode-substrate distance were controlled for changing film properties. For the evaluation of crystal structure, X-ray diffraction analysis was performed. Mechanical properties of films were characterized using AFM, nano-indentation and ball-on-disc friction tests, and the results were compared to those of films deposited by R. F. magnetron sputtering. The hardness of films was in the range of 9-28 GPa. Friction coefficients were almost the constant values of 0.4-0.5. Harder film showed lower wear rate. Films deposited by pulsed arc deposition were smoother and high wear-resistant.
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