Abstract
Thick titanium carbide (TiCx) plates were prepared by chemical vapour deposition using TiCl4, CCl4 and H2 as source gases at deposition temperatures (Tdep) of 1573 to 1873 K, total gas pressures (Ptot) of 4 and 40 kPa, and source gas molar ratio (CCl4/(TiCl4 + CCl4)) (mc) of 0.13 to 0.91. The effects of deposition conditions on the microstructure, preferred orientation, deposition rate, lattice parameter and composition were investigated.
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