Preparation of TiN thin films by the dynamic mixing method using an N 2+ ion beam of 1 keV

Abstract

This experiment was carried out to obtain the optimum conditions for TiN film preparation by the dynamic mixing method using 1 keV N 2 + ions. Dynamic mixing is a system which involves ion implantation during evaporation. The N:Ti elemental ratios and chemical shifts of films were determined by means of X-ray photoelectron spectroscopy (XPS). TiN prepared by ion plating was used as a standard sample for the XPS and hardness measurements. Although the same measurement results of the XPS were obtained as for the standard TiN, the hardness of the film prepared at the ambient temperature was less than one-half that of the standard sample. Otherwise the film prepared during the heating of a substrate at 500°C was as hard as the standards sample. Then an N 2 + ion flux of 2.5 × 10 15 ions cm −2s −1 under a titanium deposition rate of 1 nm s −1 was used and the coloration of this film became yellowish bronze. The differences between films prepared at two temperatures, i.e. of the ambient and 500 °C, were investigated by X-ray diffraction and thermal desorption spectroscopy.