Abstract
Tin oxide (SnO2) thin films were deposited on silicon (100) and alumina substrates by using a pulsed laser deposition (PLD) method. X-ray diffraction pattern shows that crystallinity of the film increased with increasing oxygen gas pressure and substrate temperature. Gas sensitivity of the film for 0.31vol% H2 gas increased with increasing oxygen gas pressure and substrate temperature. In addition, Pd doped SnO2 thin films can be prepared using new PLD method combined with d.c. sputtering to prepare highly sensitive gas sensors.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: IEEJ Transactions on Electronics, Information and Systems
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
