Abstract
Growth as well as crystallographic and electronic properties of thin AlO x layers on Fe(110) were studied by means of low-energy electron diffraction and Auger-electron spectroscopy. Al layers of different thickness were deposited on Fe(110) and successfully oxidized to AlO x . The step-by-step oxidation of thin Al layers at room temperature leads to the formation of amorphous AlO x on top of the Fe(110) surface. A subsequent annealing at 250 ° C of the oxidized 7-Å thick Al layer results in the formation of a well-ordered Al 2O 3(0001) layer on the Fe(110) surface.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
