Abstract
p-SnS/n-Cd1–xZnxS heterojunctions were fabricated by using pulsed electrochemical deposition (P-ECD) and photochemical deposition (PCD) methods. CdSO4, ZnSO4 and Na2S2O3 were used for the deposition of Cd1–xZnxS alloys by PCD method on the indium-tin-oxide (ITO) coated glass substrates. The x values in the Cd1–xZnxS were varied by changing the Na2S2O3 concentration in the deposition bath. SnS layer was deposited by P-ECD using SnSO4 and Na2S2O3. The composition details of the n-Cd1–xZnxS window layer were estimated from LO (longitudinal optical) phonon frequency observed from the Raman studies. The photovoltaic properties of the fabricated solar cell structure glass/ITO/Cd1–xZnxS /SnS/In are characterised under the photon intensity 100 mW/cm2 and we observed the short circuit current density as 4.8 mA/cm2, open circuit voltage as 280 mV and fill factor as 0.34. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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