Abstract
ZnO thin films were fabricated by the photochemical deposition (PCD) method. The deposition solution contains ZnSO 4, Na 2SO 3, Na 2S 2O 3 and a small amount of NH 4OH for pH adjustment. We blew oxygen or oxygen + ozone (O 3) gas into the solution to increase the dissolved oxygen content and enhance the oxidation reaction. The films were characterized by Auger electron and optical spectroscopy, and a photoelectrochemical (PEC) measurement. On an indium-tin-oxide (ITO) substrate, the films showed high optical transmission in the visible range. In a current–voltage measurement for films on a p-Si substrate, the O 3 bubbling sample showed rectification properties and photovoltaic effects.
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