Abstract
Tellurium doped graphitic carbon nitride (TeCN) photocatalyst was synthesized by the combination of hydrothermal treatment and copolymerization of melamine and tellurium powder. With Te doping, 1% TeCN exhibits a high nitrogen fixation rate under visible light irradiation, which is 7.2 times compared to that of graphitic carbon nitride (CN). The markedly higher activity of 1% TeCN is attributed to the better chemical adsorption of N2, enhanced separation efficiency of charge carriers and higher CB potential. Notably, a new midgap states induced by Te doping also contributes to the improved activity of nitrogen fixation. Besides, valence state changes between Te6+, Te4+ and Te° in 1% TeCN further promoted the nitrogen fixation activity. This study demonstrates that the modification of g-C3N4 by Te is an effective way to improve the photocatalytic nitrogen fixation effect of the photocatalyst.
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