Abstract
AbstractSrRuO3 and CaRuO3 thin films were successfully prepared by metalorganic chemical vapor deposition (MOCVD). Sr(C11H19O2)2(C8H23N5)x – Ru(C11H19O2)3–O2 and Sr(C11H19O2)2(C8H23N5)x. – Ru[(C5H4)(C2H5)]2 - O2 systems, and Ca(C11H19O2)2(C8H23N5)x, – Ru(C11H19O2)3–O2 and Ca(C11 H19O2)2(C8H23N5)x – Ru[(C5H4)(C2H5)]2– O2 systems were used as source materials for SrRuO3 and CaRuO3 thin film preparation, respectively. Sr and Ca source vapors were successfully obtained by bubbling N2 gas including C8H23N5 vapor through liquid sources. Self-composition limiting to keep single phase of SrRuO3 and CaRuO3 was observed under an excess input of the Ru source at 700 – 750 °C for both Ru sources. Epitaxlly grown films with high crystal perfection were grown on various kinds of substrates in this temperature range. Epitaxially grown SrRuO3 film with three kinds of orientation, (100), (110) and (111), were deposited on (100), (110) and (111)SrTiO3 substrates, respectively. By using these films as bottom electrodes, we measured the ferroelectric anisotropy of SrBi2Ta2O9 by preparing (001)- and (116)- oriented films.
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