Abstract
Epitaxial SrRuO3 films with thicknesses of 50–80nm were systematically grown at 750°C on (100)SrTiO3 substrates by metalorganic chemical vapor deposition with different supply rates of the Sr and Ru source gases. Stoichiometric films with a low resistivity of 240–260μΩcm can be grown on polished (100)SrTiO3 substrates over a wide range of source gas supply rates. However, the surface flatness of the deposited film was very sensitive to changes the input source gas supply rate. SrRuO3 films having step and trace structured surfaces were grown on polished and atomically flat SrTiO3 substrates under an optimized input gas supply rate. A height of 7–8nm with a terrace width of 500–1000nm were obtained on polished SrTiO3 substrates, but a single unit cell height of about 0.4nm was obtained with a 200–300nm terrace width on atomically flat SrTiO3 substrates. This opens the possibility of the mass production of atomically flat conductive perovskite layers.
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