Abstract
Using the catalytic chemical vapor deposition (Cat-CVD) method, a-Si and SiN x films have been the main focus of studies. SiO 2 films have not been studied because of the limited life of catalysts such as tungsten or molybdenum in an oxidative atmosphere. In this report, we describe oxide film preparation using an iridium catalyst. We determined the most appropriate catalyst material for the oxide film process by exposing heated materials in tetraethoxysilane (TEOS) or O 2 gas. As the result, it was confirmed that the Ir catalyst works in a slow oxidative atmosphere. Using the Ir catalyst, SiO 2 films were deposited in two gas combinations: TEOS and N 2O, and SiH 4 and N 2O. Although the SiO 2 film processed with the combination of TEOS and N 2O was stoichiometric, its breakdown voltage is not sufficient. The SiO 2 film processed with the combination of SiH 4 and N 2O showed good electrical property.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
