Abstract
The controlled growth of mono-/double-layer 2H-MoTe2 fully covering the substrate is highly desirable for the future of device fabrication but still remains a challenge. In this study, we present growth of mono-/double-layer 2H-MoTe2 films on graphene terminated 6H-SiC(0 0 0 1) substrates by molecular beam epitaxy (MBE). We develop two distinct processes which achieve better layer-by-layer controllability of stoichiometric films. We further provide a coherent explanation for the Moiré patterns together with the formation of semi-coherent twin boundaries (TBs) in the films and the electronic structure of the films. Our materials are analyzed in detail by reflection high energy electron diffraction (RHEED), X-ray photoemission spectroscopy (XPS), and scanning tunneling microscopy/spectroscopy (STM/STS).
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
