Abstract
The growth dynamics of GaAs, AlAs and (Al, Ga)As films grown by molecular beam epitaxy (MBE) on GaAs(110) and (111)A substrates have been studied using reflection high energy electron diffraction (RHEED) intensity oscillations and scanning tunnelling microscopy (STM). In contrast to growth on (001) oriented substrates, the period of the RHEED intensity oscillation does not in general provide a measure of the growth rate. This is explained by the very different surface chemistry involved, since the short lifetime of arsenic molecules (As2 or As4) on non-(001) surfaces results in cation-stable surface conditions, which generate arsenic (anion)- induced intensity oscillations, whereas on (001) surfaces they are cationinduced under all normal growth conditions. The effects of this behaviour on surface morphology are illustrated, as are the relative influences of Ga and Al. STM images obtained during the first few monolayers of growth provide a detailed indication of the growth mode and in particular explain in a simple manner the origin of bilayer period RHEED intensity oscillations obtained during growth on GaAs (110).
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Materials Science: Materials in Electronics
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
