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Abstract
The properties of SiN x films prepared by catalytic chemical vapor deposition (Cat-CVD) on various gate-metals were studied for application of bottom-gate thin-film transistors (BG-TFTs). Additionally, the gate-insulating properties after rapid thermal annealing (RTA) were investigated for the fabrication of polycrystalline silicon (poly-Si) TFTs by simple RTA of amorphous silicon (a-Si:H) BG-TFTs. It was found that Cat-CVD SiN x on metals can be used as gate-insulating films of a-Si:H BG-TFTs and that the films can also be used even after RTA at 800 °C, when the surface of such metals is slightly oxidized.
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