Preparation of PZT on diamond by pulsed laser deposition with Al 2O 3 buffer layer

Abstract

For the purpose of broad-bandwidth high frequency surface acoustic wave devices fabrication, we report on the successful preparation of Pb(Zr 0.52Ti 0.48)O 3 (PZT) films by pulsed laser deposition (PLD) process on (1 1 1)-oriented polycrystalline diamond substrates with aluminum oxide (Al 2O 3) as buffer layer. Al 2O 3 was deposited on diamond substrates by high-vacuum electron-beam evaporation method at 200 °C. Then PLD technique was used for PZT deposition. The chemical states of Al and O in Al 2O 3 were investigated by X-ray photoelectron spectroscopy. The surface morphology of Al 2O 3 and PZT films was studied by the atom force microscopy image. X-ray diffraction results showed that before annealing, 350 °C-prepared PZT was amorphous and 550 °C-prepared PZT was (2 2 2)-oriented pyrochlore phase PZT. After rapid thermal annealing at 650 °C, (1 0 1)-oriented pure perovskite phase PZT could be obtained from the 350 °C-prepared PZT film.