Abstract
Highly oriented aluminum nitride thin films were grown on sapphire (0001)-substrate by pulsed laser deposition technique. Characterization was done by X-ray-diffraction, elastic recoil detection analysis and Rutherford backscattering/channeling measurements. The epitaxial properties were studied as function of the substrate temperature and the deposition rate. An epitaxial relation to the sapphire substrate is found to be AlN [0001] || Al 2O 3 [0001] and AlN [112̄0] || Al 2O 3 [101̄0]. XRD-texture-analysis on films deposited at 850°C shows a full width half maximum Δω of 0.13° (rocking curve) and Δϕ of 1.1° (in-plane).
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