Abstract
Pb(Zr<sub>0.52</sub>Ti<sub>0.48</sub>)O<sub>3</sub> thin films were prepared on Pt/Ti/SiO<sub>2</sub>/Si substrates by hybrid processing: sol-gel method and pulsed laser deposition. The temperature of postdeposition annealing in hybrid processing is 650°C, and is lower than that in the case of direct film deposition by pulsed laser deposition on a Pt/Ti/SiO<sub>2</sub>/Si substrate. The preferred orientation of the PZT films obtained by hybrid processing can be controlled using the seed layer obtained by the sol-gel process. The TEM image showed that the PZT films have a polycrystalline columnar microstructure extending throughout the thickness of the film and no shape interface was observed between the layers obtained by the sol-gel method and the pulsed laser deposition process. Electrical properties of the films were evaluated by measuring their <i>P-E </i>hysteresis loops and dielectric constants. The 1-μm-thick PZT films fabricated by hybrid processing consist of mainly the perovskite phase with a (111)-preferred orientation and have good ferroelectric properties. The ferroelectric parameters were remanent polarization <i>P<sub>r</sub></i> = 23.6 μC/cm<sup>2</sup>, and coercive field <i>E<sub>c</sub></i> = 54.8 kV/cm.
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