Abstract
Thin films of Pb(Zr0.52Ti0.48)O3 (PZT) were prepared by hybrid processing (sol‐gel and excimer laser ablation) on Pt/Ti/SiO2/Si substrates. Crystalline phases and microstructures of the PZT films were investigated by X‐ray diffraction analysis and scanning electron microscopy, respectively. Electrical properties of the films were evaluated by measuring their P‐E hysteresis loops and dielectric constants. The temperature of postdeposition annealing in hybrid processing was lower than that in the case of direct film deposition by laser ablation on a Pt/Ti/SiO2/Si substrate. The preferred orientation of the films derived by hybrid processing could be controlled using the seeding layer deposited by the sol‐gel process. The films fabricated by hybrid processing consisted of the perovskite phase with a (111) preferred orientation and had good ferroelectric properties.
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