Abstract
Crack-free polycrystalline PZT (PbZrTiO 3) thick films up to 15 μm with perovskite structure have been prepared from a dip-coating process. The influence of substrate characteristics, withdrawal speed and ionic concentration of precursor solution on the morphology and microstructure of PZT film was examined. The dielectric, ferroelectric and piezoelectric properties of PZT thick films on Pt/Ti substrate were measured and evaluated. PZT(53/47) thick films on Pt/Ti substrate exhibits a excellent electric properties, e.g. P r: 35 μC/cm 2; E c: 32 kV/cm; ϵ r: 830; tan δ: 0.01–0.03; d 33: 142.
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