Abstract
Using molecular beam epitaxy, we have successfully prepared PrBa2Cu3Oy (PBCO) films and PBCO/YBa2Cu3Oy (YBCO) layered structures. Epitaxial growth of these films was confirmed by in situ reflection high-energy electron diffraction. The temperature dependence of resistivity in the PBCO film showed semiconducting behavior. The lattice parameters of Pr1+xBa2−xCu3Oy films decreased when x increased and almost coincided with that of well-oxidized YBa2Cu3Oy films (y∼7) when x∼0.3. These experimental results indicate that YBCO/PBCO/YBCO multilayers are suitable for artificial layered structures of oxide superconductors, i.e., electronic devices.
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