Abstract
Bismuth-containing compounds inherit the high spin-orbit coupling and bandgap bowing effects of the Bi atom. Here, we report the growth of InBi films using molecular beam epitaxy. By growing in a Bi-rich regime, we obtain coalesced and crystalline films with a sharp interface to the high-resistivity Si(111) substrate. Temperature-dependent transport and resistivity measurements exhibit a nonlinear Hall effect and parabolic magnetoresistance, suggesting two-carrier semimetallic behavior. In In-rich films, metallic temperature-dependent resistivity is observed. In Bi-rich films, we observed semiconductorlike temperature-dependent resistivity as well as superconductivity.
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