Abstract
2,6-Diaminoanthracene (AnDA)-functionalized graphene oxide (GO) (AnDA-GO) was prepared and used to synthesize a graphene oxide-based polyimide (PI-GO) by the in-situ polymerization method. A PI-GO nanocomposite thin film was prepared and characterized by infrared (IR) spectroscopy, thermogravimetric analysis (TGA) and UV-visible spectroscopy. The PI-GO film was used as a memory layer in the fabrication of a resistive random access memory (RRAM) device with aluminum (Al) top and indium tin oxide (ITO) bottom electrodes. The device showed write-once-read-many-times (WORM) characteristics with a high ON/OFF current ratio (Ion/Ioff = 3.41 × 108). This excellent current ratio was attributed to the high charge trapping ability of GO. In addition, the device had good endurance until the 100th cycle. These results suggest that PI-GO is an attractive candidate for applications in next generation nonvolatile memory.
Highlights
Graphene, a two-dimensional honeycomb lattice substance, has attracted significant attention due to its’ exceptional mechanical, thermal, electronic, electrochemical and optical properties [1,2,3,4,5].Graphene shows an excellent electron charge mobility of about 200,000 cm2 /V at room temperature, and a low resistivity of about ~10−6 Ω cm [6]
A mixture of DAn, AnDA and AnDA-graphene oxide (GO) in DMAc was stirred at the room temperature for 24 h to prepare poly(amic acid)-GO (PAA-GO), which was chemically imidized to obtain PI-GO (Figure 1c)
Device was fabricated with a single PI-GO nanocomposite memory layer
Summary
A two-dimensional honeycomb lattice substance, has attracted significant attention due to its’ exceptional mechanical, thermal, electronic, electrochemical and optical properties [1,2,3,4,5]. It is difficult to incorporate pristine graphene sheets into polymer matrices due to its strong interlayer cohesive energy and surface inertia [7,8]. To overcome these limitations, graphene is converted to graphene oxide (GO) by chemical methods [9,10,11]. Polyimides (PIs) are widely used for a variety of applications, including its use in display, aerospace, vehicles, and electronic industries due to its good mechanical properties, flexibility, excellent thermal stability, low dielectric permittivity and chemical resistance [28,29,30,31]. PI-based RRAM is one of the important candidates due to good thermal stability and chemical resistance [36,37,38]. An ITO/organic layer/Al structure is widely used for organic RRAM devices [39]
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