Abstract

In this study, we report the deposition of crack-free transparent PZT films (up to ∼859 nm) by metallo-organic decomposition (MOD) process on amorphous silica substrate. Effect of SrTiO3 (STO) buffer layer on the growth behavior of PZT thin films deposited on SiO2-coated silicon substrates was systematically studied. Perovskite phase, which cannot be formed directly on SiO2/Si substrates, has been obtained when a thin STO film (∼150 nm) was used as buffer layer. A SIMS examination indicates that the upward diffusion of Si-species into PZT layer is minimal, although downward diffusion of Pb-species into the SiO2 layer is still observable.

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