Abstract
A series of technical data on the preparation of oriented PbTiO3 ferroelectric thin films on Si wafer by rf sputtering have been presented. Two kinds of approaches have been tried to improve crystalline properties of the PbTiO3 films. Firstly, highly-oriented CaF2 and SrF2 films have been grown on Si wafer as a buffer layer by electron beam evaporation at 400–600°C. The PbTiO3 film on the SrF2/(100) Si and CaF2/(111) Si have been oriented in (100) and (110) & (101) directions, respectively. Secondly, negative DC bias voltage has been applied to the Si substrate during the sputtering of PbTiO3. The obtained films are highly-oriented and their dielectric properties are improved with increase of the bias voltage. Surface of the obtained film is very smooth.
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