Abstract
A simple and cost effective chemical technique has been utilized to grow cadmium sulphide (CdS) nanoparticles at room temperature. The sample is characterized with XRD (X-ray diffractometer), SEM (Scanning electron microscope), TEM (Transmission electron microscope) and UV-VIS spectrophotometer. The particle size estimated using X-ray line broadening method is approximately 5 nm. Instrumental broadening was taken into account while particle size estimation. The lattice strain was evaluated using Williamson-Hall equation. SEM illustrates formation of sub-micron size crystallites and TEM image gives particle size approximately between 4-5 nm. Optical absorption study exhibits a band gap energy value of about 2.6 eV.
Highlights
The synthesis and characterization of cadmium sulphide via different techniques have attracted considerable attention due to their potential applications
The observed broad hump suggests that the synthesized materials are nanocrystalline in nature with very small particle size
Nanocrystalline powders of cadmium sulphide (CdS) can be prepared by SILAR technique
Summary
The synthesis and characterization of cadmium sulphide via different techniques have attracted considerable attention due to their potential applications. Nanometer-sized semiconductor exhibit structural, electronic, optical, luminescence and photoconducting properties very different from their bulk properties[1,2]. They have potential application prospects in solar cell, photodetector, laser, LED, high-density magnetic information storage and many others in semiconductor industries[3]. There are various methods to prepare CdS nanoparticles[1,4,5,6,7]. The technique involves successive dipping of a precleaned substrate in separately placed cationic and anionic precursor. Between every immersion it is rinsed in distilled water or ion exchanged water. We have earlier reported preparation of ZnS and SnS thin films by SILAR11,12
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