Preparation of N-type Silicon Carbide-Based Thermoelectric Materials by Spark Plasma Sintering

Abstract

The SiC/Si 3 N 4 sintered materials were prepared by Spark Plasma Sintering at 2000°C. The crystal structure of sintered materials is cubic β-SiC type with relative density higher than 80%. All sintered materials show n-type conduction and the carrier concentration increases with increasing Si 3 N 4 concentration. Seebeck coefficient a and electrical conductivity a increased with increasing temperature indicating suitable for high temperature thermoelectric conversion. Thermoelectric properties are improved by addition of Si 3 N 4 and the power factor α 2 σ takes a maximum value at SiC-7 mass%Si 3 N 4 .