Abstract
The electrical resistance behavior of a material under very high pressure can be studied by pressing the material with a diamond indentor against a diamond flat. The high pressures generated can be calculated using Hertz's theory provided the material thickness is about a micron or less. Here we describe a method of preparing micron thick specimens of a few millimeters in size. We have prepared micron thick specimens of a few millimeters in size of Si (100), Si (111), NaCl (100). The result of high pressure study on Si (100) is also presented.
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