Abstract
Microcrystalline germanium carbon (µc-Ge1-xCx) thin films were deposited by hot-wire chemical vapor deposition using dimethylgermane. We investigated the influence of the hydrogen dilution ratio on the deposition rate and film structure. The deposition rate and crystal orientation of the films were strongly affected by the hydrogen dilution ratio. The conductivity of the films was changed with the structure of the films from amorphous to crystalline. The conductivity of the amorphous film was 3.04×10-5 S/cm and that of the microcrystalline films was up to 0.1 S/cm. The carbon concentrations of the films were about 2 at. %, as estimated by X-ray photoelectron spectroscopy. The energy at which the absorption coefficient becomes 104 cm-1 for the µc-Ge0.98C0.02 film is 1.30 eV, which is 0.25 eV higher than that of c-Ge.
Published Version
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