Abstract
MgO films have been prepared on GaAs(100) substrates by low-pressure metalorganic chemical vapor deposition using Mg(tmhd) 2 as a precursor and oxygen as a carrier gas, where tmhd is 2,2,6,6-tetramethyl-3,5-heptanedionate. Polycrystalline MgO films oriented mainly in the [100] direction were obtained at the substrate temperature of 300 °C. However, [110] oriented growth began to appear as the deposition temperature was increased. Deposition at 500 °C was found to induce breaking of the GaAs surfaces.
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