Abstract
Single crystals of LaB 6 were prepared using the RF heated floating zone method. The growth temperature was decreased by increasing the boron content in the molten zone (the traveling solvent floating zone method). Subgrain boundaries were not observed in the crystal when the growth temperature was decreased by 170°C, when the atomic ratio of the zone composition of B/La was 11. The composition of the prepared crystals was in a narrow nonstoichiometric La deficiency range of less than 1.1% of La and the atomic ratio of B/La was 6–6.06. The residual electrical resistivity at 4.2 K increased by 0.5 μΩ cm per 1% of the La vacancy.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
