Preparation of high-performance multilayer circuits by controlling the diffusion of Ag in borosilicate glass-ceramics through the addition of SiO2

Abstract

Due to its superior reliability and performance, thick film technology is extensively employed in various applications, including automotive electronics, consumer electronics, communication engineering, and aerospace. However, a challenge arises from the mutual diffusion during the electronic paste production process, which leads to a decline in insulation performance and hinders the production of three-dimensional equipment. Inspired by the principles of low-temperature co-fired ceramic technology, a multi-layered ceramic structure has been successfully bonded using thick film technology by introducing a borosilicate glass-ceramics layer. To further enhance the properties of this multi-layered ceramic structure, approximately 8 wt% SiO2 was incorporated into the borosilicate glass-ceramics. This addition effectively inhibits silver diffusion and reduces the diffusion depth within the glass-ceramic film. The key mechanisms behind this improvement are the increased activation energy for crystallization, resulting in a slower crystallization rate due to the addition of SiO2. Moreover, the multi-layered ceramic with a sandwich structure exhibits remarkable properties. Notably, the dielectric strength of this system has been significantly enhanced to 13.9 kV/mm, accompanied by a high adhesion strength of 790 N. These enhanced properties of the optimized system indicate promising characteristics for multi-layer circuit applications.