Abstract
HfO 2 nano-films were deposited onto a Si(100) substrate using an alternate reaction of HfCl 4 and O 2 under atmospheric pressure. Self-limiting growth of the HfO 2 was achieved in the range of the growth temperature above 873 K. The X-ray diffraction of the HfO 2 nano-films showed a typical diffraction pattern assigned to the monoclinic polycrystalline phase. This gives effective permittivity value of 9.6 for the HfO 2 nano-film grown at 573 K.
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