Abstract
Investigation has been made on Zn x Cd 1−x O thin films prepared by a sputtering technique. From X-ray diffraction, it was found that the magnitude of the preferred (002) peak of ZnO decreased as the cadmium concentration was increased. For the rf sputtered Cd-rich films, a preferred (200) plane was observed. It was further found that the crystalline quality of the films was better for the pure materials. The absorption edge obtained from transmission measurements showed a minimum at x = 0.6 and an abrupt increase as the x value was increased from 0.6 to 1. Room temperature electrical measurements showed a strong positional effect for the Zn-rich samples. Good resistivity uniformity was obtained for the Cd-rich films even using the same deposition conditions.
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