Preparation of few-layer nitrogen-doped graphene nanosheets by DC arc discharge under nitrogen atmosphere of high temperature

Abstract

Few-layer N-doped graphene nanosheets (GNSs) were prepared by a DC arc discharge under a nitrogen atmosphere of high temperature. HRTEM characterization shows the typical morphology of the several layer GNSs and some GNSs stacking together in the form of terrace. The typically rotational stacking faults can be observed in the GNSs. The Raman spectrum shows the characteristic peak of the graphene. It is confirmed by XRD, EELS, and EDX characterizations that the GNSs are doped with nitrogen. The content of few-layer N-doped GNSs in the column-shaped deposits formed on the top of the cathode is larger than 50 weight %. The formation mechanism of N-doped GNSs is discussed on the foundation of our results and other related published work.