Abstract
Single crystal films of and have been grown from the vapor phase on several substrates in a closed system containing source material and hydrogen chloride. The and source material reacts with to form gallium chlorides and elemental arsenic or phosphorus. These are transported along a temperature gradient in the ampoule and deposited at the cooler end as or , several hundred degrees below their melting points. Epitaxial films have been grown on monocrystalline Ge and substrates of various crystallographic orientations and epitaxial films on and . The conductivity type of the films was controlled by appropriate doping of the source material. The growth rates were determined as a function of temperature and intial pressure.
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