Preparation of diamond on GaN using microwave plasma chemical vapor deposition with double-substrate structure

Abstract

Combining diamond with GaN can significantly improve the heat dissipation performance of GaN-based devices. However, how to avoid the destructive damage to the GaN epi-layer caused by high-temperature hydrogen plasma during the diamond growth is still a problem. This study employed a Si transition layer and double-substrate structure microwave plasma chemical vapor deposition (MPCVD) to prepare diamond film on GaN epi-layer. The effects of double-substrate structure on the diamond growth were studied. The microwave plasma parameters of both single-substrate structure and double-substrate structure MPCVD diagnosed by emission spectra were comparatively investigated. It has been found that the microwave plasma energy of double-substrate structure MPCVD is relatively more concentrated and has higher radicals activity, which is beneficial to the diamond growth. The impacts of the Si transition layer on the diamond growth were also investigated. It demonstrates that the Si transition layer can effectively protect the GaN epi-layer from being etched by hydrogen plasma and improve the diamond growth. The relationship between the thickness of the Si transition layer and the diamond growth and the relationship between diamond film thickness and adhesion has been studied in detail.