Abstract
Diamond thin films were grown in an ellipsoidal 6 kWatt microwave plasma chemical vapour deposition reactor [1, 2] in a pressure range of 150 to 250 mbar. Effect of total pressure, methane concentration and argon concentration on diamond growth on mechanically seeded silicon substrates and on plasma characteristics were investigated. Optically good thick diamond films were obtained with high growth rate (4.5 μm/h) at high-pressure. The argon concentration affects strongly the deposition rate, the surface morphology and the grain size. The microwave plasma was characterized by optical emission spectroscopy (OES) during deposition. Diamond films were characterized by Raman Spectroscopy and Scanning Electron Microscopy (SEM). The temperatures of the excited CH and C2 species, as well as the excitation temperature were determined from the OES measurements. The plasma composition is sensitive to the methane concentration and especially to the argon concentration in the discharge. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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