Preparation of CuO Thin Films and Their Electrical Conductivity

Abstract

Copper (II) oxide thin films doped with Li and Al were prepared by a liquid phase method on glass substrate. The used reagents were mainly Cu(OAc){sub 2}, Al({sup i}OPr){sub 3} and LiOAc. The films were crystallized as black CuO crystal by heating above 300 C. The electrical conductivity of the doped films changed as the same tendency expected based on the p-type oxide semiconductor. The film doped with Al{sup 3+} exhibited the p-type properties of semiconductor with low conductivity. This is expected by consideration of the change in a cation vacancy concentration in equilibrium. (orig.)