Effects of oxygen percentage on the growth of copper oxide thin films by reactive radio frequency sputtering

Abstract

Copper oxide thin films were deposited onto glass substrates by reactive radio frequency magnetron sputtering at various oxygen percentage flow rates R(O2). X-ray diffraction analysis revealed that nanocrystallite copper oxide thin films with cubic, tetragonal, and monoclinic structure were formed at R(O2) values of 10%, 20%, and ≥30%, respectively. Energy dispersive X-ray spectroscopy and Fourier transform infrared spectroscopy were used to verify the copper oxides phases. With increased R(O2), the root mean square surface roughness of the deposited films decreased from 4.82 nm to 1.78 nm. Moreover, both the band gap type and value changed with increased R(O2). For R(O2) at 20%, single phase tetragonal Cu4O3 thin film with a direct band gap of 2.20 eV was formed. For R(O2) ≥ 30%, single phase monoclinic CuO thin films with an indirect band gap of 1.20 eV–1.25 eV were formed. In addition, conductive copper oxide thin films tended to form for R(O2) < 30%, whereas insulator oxide thin films tended to form for R(O2) ≥ 30%. Through this study, the crystallization behavior, the band gap, and the resistivity properties of the deposited copper oxide thin films as a function of the R(O2) were obtained.