Abstract
CuInSe2(CIS) films directly electrodeposited on sputtered Mo-glass, sprayed SnO2-glass substrates had been accomplished at room temperature in the potentiostatic mode from a bath containing CuCl, InCl3(DOT)4H2O and SeO2. The acidity of bath was adjusted to 1PH. Energy dispersive spectrometry, atomic force microscopy (AFM), x- ray diffraction and hot-probe method was utilized to characterize the CIS films. The key factor for preparing single-phase CuInSe2 is the proportion of CuCl, InCl3(DOT)4H2O and SeO2. The CIS films are nearly stoichiometry of CuInSe2 and polycrystalline on Mo- glass. The Cu excess films are p-type semiconductor, and the In excess films n-type. The deposition potential obviously affects the surface morphology of CIS films. AFM results had indicated that the CIS films on Mo-glass grow in layer and on SnO2 glass in island.© (2000) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
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